Hanno H. Weitering

 

Department of Physics and Astronomy
The University of Tennessee
Knoxville, TN 37996 (USA)
Tel: +1-865-974-7841
FAX: +1-865-974-7843
Email: hanno at utk.edu

 

Materials Science and Technology Division
Oak Ridge National Laboratory
Oak Ridge, TN 37831 (USA)
Tel: +1-865-574-1911
FAX: +1-865-576-8135
Email: hanno at ornl.gov


 

A. Biographical Summary
 

Educational Background
  • M.Sci. degree (cum laude), Inorganic Chemistry, 1986, University of Groningen, The Netherlands.

  • Ph.D. degree, “Mathematics and Natural Sciences” cum laude (top 5%), 1991 University of Groningen.
     

Honors and Awards

  • Elected as APS Fellow, 2010

  • Joint Institute of Advanced Materials Chair of Excellence, 2006-present

  • Chancellor's Award for Research and Creative Achievement, 2005

  • College Convocation Award for “Junior Faculty Research and Creative Achievement,” 1999

  • Chancellor's Award for Professional Promise in Research and Creative Achievement, 1999

  • UTK/ORNL Science Alliance Award, 1997, 1998, 1999

  • Research Fellowship granted by the European Community under the program "Human Capital and Mobility"; 1993

  • DSM prize for Chemistry and Technology, 1991

  • Benjamin Franklin Fellowship, University of Pennsylvania, 1991
     

Professional Experience

  • 2006-present Joint Institute of Advanced Materials Chair of Excellence

  • 2001-present Professor of Physics, The University of Tennessee
    Joint Faculty, Oak Ridge National Laboratory.

  • 2000-2001 Professor of Physics, Delft University of Technology.
    “Leerstoel” Electronic Materials

  • 1999-2000 Associate Professor of Physics at the University of Tennessee; Guest Scientist, Solid State Division, Oak Ridge National Laboratory.

  • 1993-1999 Assistant Professor of Physics at the University of Tennessee; Guest Scientist, Solid State Division, Oak Ridge National Laboratory.

  • 1991-1993 Benjamin Franklin Fellow at the University of Pennsylvania (with Prof. Dr. E.W. Plummer)

  • 1986-1991 Teaching and Research Assistant at the University of Groningen(with Prof. Dr. C. Haas and Dr. T. Hibma)

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B. Research Interests
 

Synthesis, structure, magnetic and electronic properties of low-dimensional materials including quantum wires, surfaces, interfaces, and thin film materials. Correlated electron systems, cooperative phenomena, spintronics, phase transitions, surface chemical reaction mechanisms. Scanning Tunneling Microscopy and Photoemission. 

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C.Publications (Selected papers)
 

One-dimensional metals: Luttingers wake”H. Weitering, Nature Physics(Advance online publication)(2011) .

Plasmon response of a quantum-confined electron gas probed by core-level photoemissionM. Özer, E. J. Moon, A.G. Eguiluz and H. H. Weitering, Phys. Rev. Lett. 106, 197601 (2011).

 

Strong quantum size effects in Pb(111) Thin films mediated by anomalous Friedel oscillations”,Y. Jia, B. A. Wu, C. Li, T. L. Einstein, H. H. Weitering, and Z. Y. Zhang, Phys. Rev. Lett. 105, 066101 (2010).


Colloquium: Electronic instabilities in self-assembled atom wires,” P.C. Snijders, and H. H. Weitering, Reviews of modern Physics, 82, 307 (2010).


Band Gap Narrowing of Titanium Oxide Semiconductors by Noncompensated Anion-Cation Codoping for Enhanced Visable-Light Photoactivity,” W.G.Zhu, X.F. Qiu, V. Iancu, X. Q. Chen, H. Pan, W. Wang, N. M. Dimitrijevic, T. Rajh, H. M. Meyer, M. P. Paranthaman, G. M. Stocks, H. H. Weitering, B. H. Gu, G. Eres, and Z. Y. Zhang, Phys. Rev. Lett. 103, 226401 (2009).


Structure of YSi2 nanowires from scanning tunneling microscopy and first principles,” V.Iancu, P.R.C Kent, C.G. Zeng, and Hanno H. Weitering,Appl. Phys. Lett. 95, 123107 (2009).
 

Mechanism of the Band Gap Opening across the Order-Disorder Transition of Si(111)4x1-In,” C. Gonzalez, Jiandong Guo, J. Ortega, F. Flores, and Hanno H. Weitering,Phys. Rev. Lett.102, 115501 (2009)
 

Charge-order fluctuations in one-dimensional silicides,” Changgan Zeng, P.R.C. Kent, Tae-Hwan Kim, An-Ping Li, and Hanno H. Weitering, Nature Materials (2008).

 
 
Optimal control of magnetic semiconductors via subsurfactant epitaxy,” Changgan Zeng, Z.Y. Zhang, K. van Benthem, M. F. Chisholm, and H. H. Weitering, Phys. Rev. Lett 100, 066101 (2008).


Controlled self-organization of atom vacancies in monatomic gallium layers,P. C. Snijders, E. J. Moon, C. Gonzalez, S. Rogge, J. Ortega, F. Flores, and H. H. Weitering, Phys. Rev. Lett. 99, 116102 (2007).


Tuning the quantum stability and superconductivity of ultrathin metal alloys,” M. Özer, Yu Jia, Z.Y. Zhang, J. R. Thompson, and H.H. Weitering, Science 316, 1594 (2007).


Dopant segregation and giant magneto-resistance in manganese-doped germanium, A.P. Li, C. Zeng, K. van Benthem, M.F. Chisholm, J. Shen, S.V.S. nageshwara Rao, S.K. Dixit, L.C. Feldman, A.G. Pethukov, M. Foygel, and H.H. Weitering, Phys. Rev. B 75, 201201(R) (2007); Rapid Communication.


Robust superconductivity in quantum-confined Pb: equilibrium and irreversible superconductive properties” , M.M. Özer, J.R. Thompson, and H.H. Weitering, Phys. Rev. B, 74, 235427 (2006).


Epitaxial stabilization of ferromagnetism in the nanophase of FeGe,” C. Zeng, M. Varela, M. Torija, J. Shen, P. Kent, M. Eisenbach, G.M. Stocks, and H.H. Weitering, Phys. Rev. Lett. 96, 127201 (2006)


Competing periodicities in fractionally filled one-dimensional bands,” P.C. Snijders, S. Rogge, and H.H. Weitering, Phys. Rev. Lett. 96, 076801 (2006)


Hard superconductivity of a soft metal in the quantum regime,” M.M. Özer, J.R. Thompson, and H.H. Weitering, Nature Physics 2, 173-176 (2006)


Linear magnetization dependence of the intrinsic anomalous Hall effect,” C. Zeng, Y. Yao, Q. Niu, and H.H. Weitering, Phys. Rev. Lett. 96, 037204 (2006).


Magnetism in Mn xGe 1-x semiconductor mediated by impurity band carriers,” A.P. Li, J.F. Wendelken, J. Shen, L.C. Feldman, J.R. Thompson, and H.H. Weitering, Phys. Rev. B 72, 195205 (2005)


Ferromagnetism and Polaron Percolation in Mn xGe 1-x Dilute Magnetic Semiconductor,” A.P. Li, J. Shen, J.R. Thompson, and H.H. Weitering, Appl. Phys. Lett. 86, 152507 (2005).


Contrasting growth modes of Mn on Ge(100) and Ge(111) surfaces: Subsurface segregation versus intermixing,” W. Zhu, H.H. Weitering, E.G. Wang, E. Kaxiras, and Z. Zhang, Phys. Rev. Lett. 93, 126102 (2004).


Formation of atom wires on vicinal silicon,” C. Gonzalez, P.C. Snijders, J. Ortega, S. Rogge, R. Perez, F. Flores, and H.H. Weitering, Phys. Rev. Lett. 93, 126106 (2004).


Epitaxial Ferromagnetic Mn 5Ge 3 on Ge(111),” C. Zeng, S.C. Erwin, L.C. Feldman, A.P. Li, R. Jin, Y. Song, J.R. Thompson, and H.H. Weitering, Appl. Phys. Lett.83, 5002 (2003).


Surface conductance near the order-disorder phase transition on Si(100),” K. Yoo and H.H. Weitering, Phys. Rev. Lett. 87 , 026802 (2001).


Defect-mediated condensation of a charge density wave,” H.H. Weitering, J.M. Carpinelli, A.V. Melechko, J. Zhang, M. Bartkowiak, and E.W. Plummer, Science 285, p.2107-2110 (1999).


Two-dimensional phase transition mediated by extrinsic defects,” A.V. Melechko, J. Braun, H.H. Weitering, and E.W. Plummer, Phys. Rev. Lett.83, p.999-1002 (1999).


Theory of the “honeycomb chain-channel” reconstruction of Si(111)3x1,” S.C. Erwin, and H.H. Weitering, Phys. Rev. Lett. 81, p.2296-2299 (1998).


Surface charge ordering transition: a -phase of Sn/Ge(111),” J.M. Carpinelli, H.H. Weitering, M. Bartkowiak, R. Stumpf, and E.W. Plummer, Phys. Rev. Lett. 79, p.2859-2862 (1997).


Mott insulating ground state on a triangular surface lattice,” H.H. Weitering, X. Shi, P.D. Johnson, J. Chen, N.J. DiNardo, and K. Kempa, Phys. Rev. Lett.78, p.1331-1334 (1997).


Direct observation of a surface charge density wave,” J.M. Carpinelli, H.H. Weitering, E.W. Plummer, and R. Stumpf, Nature381, p.398-400 (1996); cover article.


Atomic structure dependent Schottky barrier at epitaxial Pb/Si(111) interfaces,” D.R. Heslinga, H.H. Weitering, D.P. van der Werf, T.M. Klapwijk, and T. Hibma, Phys. Rev. Lett. 64, 1589 (1990).



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